| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 22%)
в рублях |
|
|
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristorsambient or case-ratedup to 100A
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Methods of the measurement for hydrogen thyratron tubes
|
Published |
|
На языке оригинала
|
1365,00
|
|
|
|
Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)ambient or case-ratedup to 100A
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
General specification for pulse thyratrons
|
Published |
|
На языке оригинала
|
910,00
|
|
|
|
Blank detail specification for hydrogen thyratrons
|
Published |
|
На языке оригинала
|
910,00
|
|
|
|
Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Semiconductor devices-Part 6: Thyristors
|
Published |
|
На языке оригинала
|
6286,00
|
|
|
|
General requirements for thyristors for HVDC transmission
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Static var compensators(SVC)-Testing of thyristor valves
|
Published |
|
На языке оригинала
|
2688,00
|
|
|
|
General requirements for light-trigged thyristors for HVDC transmission
|
Published |
|
На языке оригинала
|
1199,00
|
|
| Страницы: 1 |