| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 22%)
в рублях |
|
|
Semiconductor devices-Discrete devices-Part 7:Bipolar transistors
|
Published |
|
На языке оригинала
|
5046,00
|
|
|
|
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Blank detail specification for bipolar transistors for switching applications
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
|
Published |
|
На языке оригинала
|
1572,00
|
|
|
|
Blank detail specification forindustrial heating triodes
|
Published |
|
На языке оригинала
|
993,00
|
|
|
|
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification
|
Published |
|
На языке оригинала
|
1572,00
|
|
|
|
Blank detail specification for case-rated bipolar transistors for low-frequency amplification
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Test methods of safe operating area for power transistors
|
Published |
|
На языке оригинала
|
993,00
|
|
|
|
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
|
Published |
|
На языке оригинала
|
1282,00
|
|
|
|
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT)
|
Published |
|
На языке оригинала
|
3557,00
|
|
|
|
Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
|
Published |
|
На языке оригинала
|
1572,00
|
|
| Страницы: 1 |