| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Metallic materials—Determination of residual stress—Sectioning relaxation strain-gage method
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Published |
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На языке оригинала
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2189,00
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Calculation of electron vacancy number in cast superalloys
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Published |
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На языке оригинала
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1786,00
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Metallic material—Determination of residual stress—Hole drilling strain-gauge method
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Published |
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На языке оригинала
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4032,00
|
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Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
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Published |
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На языке оригинала
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1382,00
|
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Test methods for warp of sapphire substrates
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Published |
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На языке оригинала
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1670,00
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Test methods for bow of sapphire substrates
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Published |
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На языке оригинала
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1670,00
|
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Matrix to superconductor volume ratio measurement—Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
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Published |
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На языке оригинала
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2822,00
|
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Mechanical properties measurement—Room temperature tensile test of NbTi/Cu composite superconductors
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Published |
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На языке оригинала
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2822,00
|
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Critical temperature measurement—Critical temperature of composite superconductors by a resistance method
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Published |
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На языке оригинала
|
1670,00
|
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Ultrasonic test methods of heavy wall thickness seamless steel pipes and tubes
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Published |
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На языке оригинала
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1670,00
|
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Metallic materials—Ductility testing—Compression test for porous and cellular metals
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Published |
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На языке оригинала
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1670,00
|
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Method for electromagnetic automatic ultrasonic testing for thicker steel plates
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Published |
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На языке оригинала
|
1670,00
|
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Test methods of cleanliness of aluminium and aluminium alloy ingots
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Published |
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На языке оригинала
|
1670,00
|
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The method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
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Published |
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На языке оригинала
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1670,00
|
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Test method for surface roughness of GaN single crystal substrate by atomic force microscope
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Published |
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На языке оригинала
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1786,00
|
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Test methods for flatness of monocrystalline silicon carbide wafers
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Published |
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На языке оригинала
|
1382,00
|
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Test method for warp and bow of silicon wafers—Automated non-contact scanning method
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Published |
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На языке оригинала
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1786,00
|
|
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Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock by secondary ion mass spectrometry
|
Published |
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На языке оригинала
|
1670,00
|
|
|
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Test method for disoclation density of GaN single crystal—Cathodoluminescence spectroscopy
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Published |
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На языке оригинала
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1670,00
|
|
|
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Test method for volume fraction of reinforcement in metal matrix composites—Image analysis method
|
Published |
|
На языке оригинала
|
1382,00
|
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