| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Semiconductor devices—Mechanical and climatic test methods—Part 23:High temperature operating life
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Published |
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На языке оригинала
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1786,00
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Semiconductor devices—Mechanical and climatic test methods—Part 26: Electrostatic discharge (ESD) sensitivity testing—Human body model（HBM）
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Published |
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На языке оригинала
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4378,00
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Semiconductor devices—Mechanical and climatic test methods—Part 27: Electrostatic discharge(ESD) sensitivity testing—Machine model(MM)
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Published |
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На языке оригинала
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1786,00
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Semiconductor devices—Mechanical and climatic test methods—Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
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Published |
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На языке оригинала
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1670,00
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Semiconductor devices—Mechanical and climatic test methods—Part 31:Flammability of platic-encapsulated devices（internally induced）
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Published |
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На языке оригинала
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1382,00
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Semiconductor devices—Mechanical and climatic test methods—Part 32:Flammability of platic-encapsulated devices（externally induced）
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Published |
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На языке оригинала
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1382,00
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Semiconductor devices—Mechanical and climatic test methods—Part 34:Power cycling
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Published |
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На языке оригинала
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1786,00
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Semiconductor devices—Mechanical and climatic test methods—Part 35: Acoustic microscopy for plastic encapsulated electronic components
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Published |
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На языке оригинала
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2477,00
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Semiconductor devices—Mechanical and climatic test methods—Part 42:Temperature and humidity storage
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Published |
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На языке оригинала
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1670,00
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Semiconductor devices—Mechanical and climatic test methods—Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat
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Published |
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На языке оригинала
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3110,00
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Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification
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Published |
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На языке оригинала
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1786,00
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Blank detail specification for bipolar transistors for switching applications
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Published |
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На языке оригинала
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1786,00
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Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
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Published |
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На языке оригинала
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2189,00
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Blank detail specification forindustrial heating triodes
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Published |
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На языке оригинала
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1382,00
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Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)пјЊambient and case-ratedпјЊup to 100A
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Published |
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На языке оригинала
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1786,00
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Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristorsпјЊambient or case-ratedпјЊup to 100A
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Published |
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На языке оригинала
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1786,00
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Methods of the measurement for hydrogen thyratron tubes
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Published |
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На языке оригинала
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1901,00
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Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes
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Published |
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На языке оригинала
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3744,00
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Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodesпјЊswitching diodes and controlled-avalanche diodes
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Published |
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На языке оригинала
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1786,00
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Semiconductordevices--Discrete devices--Part 3-2:Signal (including switching) and regulator diodes--Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
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Published |
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На языке оригинала
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1786,00
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