| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Semconductor devices Part 14-1: Semiconductor sensors - General and classification
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Published |
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На языке оригинала
|
1253,00
|
|
|
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Semiconductor devices Part 14-3: Semiconductor sensors - Pressure sensors
|
Published |
|
На языке оригинала
|
1339,00
|
|
|
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Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
|
Published |
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На языке оригинала
|
2549,00
|
|
|
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Semiconductor devices—Part 16-2: Microwave integrated circuits—Frequency prescalers
|
Published |
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На языке оригинала
|
2333,00
|
|
|
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Semiconductor devices—Part 16-4：Microwave intergrated circuits—Switches
|
Published |
|
На языке оригинала
|
2117,00
|
|
|
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Semiconductor devices—Part 16-5: Microwave integrated circuits—Oscillators
|
Published |
|
На языке оригинала
|
2549,00
|
|
|
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General requirements for thyristors for HVDC transmission
|
Published |
|
На языке оригинала
|
1339,00
|
|
|
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Static var compensators(SVC)—Testing of thyristor valves
|
Published |
|
На языке оригинала
|
2808,00
|
|
|
|
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
|
Published |
|
На языке оригинала
|
1339,00
|
|
|
|
General requirements for light-trigged thyristors for HVDC transmission
|
Published |
|
На языке оригинала
|
1253,00
|
|
|
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Micro-electromechanical system technology—Terms
|
Published |
|
На языке оригинала
|
2808,00
|
|
|
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Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT)
|
Published |
|
На языке оригинала
|
3715,00
|
|
|
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Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS
|
Published |
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На языке оригинала
|
1858,00
|
|
|
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Screening specifications for illumination LEDs in space sciences
|
Published |
|
На языке оригинала
|
1253,00
|
|
|
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Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
|
Published |
|
На языке оригинала
|
1642,00
|
|
|
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Semiconductor devices—Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
|
Published |
|
На языке оригинала
|
1339,00
|
|
|
|
Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
|
Published |
|
На языке оригинала
|
1858,00
|
|
|
|
Micro-electromechanical systems technology（MEMS） —Description and measurement methods for micro trench and pyramidal needle structures
|
Published |
|
На языке оригинала
|
2592,00
|
|
|
|
Test methods of the performances for MEMS piezoresistive pressure-sensitive device
|
Published |
|
На языке оригинала
|
1339,00
|
|
|
|
Micro-electromechanical systems technology—Gyroscopes
|
Published |
|
На языке оригинала
|
3974,00
|
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