| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
|
|
Gallium arsenide single crystal for solar cell
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Monocrystalline silicon for solar cell
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Specification for polished test silicon wafers
|
Published |
|
На языке оригинала
|
2189,00
|
|
|
|
practice for shallow etch pit detection on silicon
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Standard test method for dimensions of notches on silicon wafers
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Annealed monocrystalline silicon wafers
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Monocrystalline silicon wafers for solar cells
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Germanium single crystal for solar cell
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Casting multicrystalline silicon brick for photovoltaic solar cell
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Multicrystalline silicon wafers for photovoltaic solar cell
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
300mm monocrystalline silicon
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Test method for measuring surface roughness on planar surfaces of silicon wafer
|
Published |
|
На языке оригинала
|
3110,00
|
|
|
|
300mm polished monocrystalline silicon wafers
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning
|
Published |
|
На языке оригинала
|
2131,00
|
|
|
|
300mm monocrystalline silicon as cut slices and grinded slices
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Test method for measuring compensation degree of silicon materials used for photovoltaic applications
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Test method for measuring Phosphorus, Arsenic and Antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Metallographs collection for original defects of crystalline silicon
|
Published |
|
На языке оригинала
|
6912,00
|
|
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