Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%) в рублях |
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Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning
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Published |
На языке оригинала
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1411,00
|
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300mm monocrystalline silicon as cut slices and grinded slices
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Published |
На языке оригинала
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1058,00
|
|
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Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
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Published |
На языке оригинала
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1058,00
|
|
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Test method for measuring compensation degree of silicon materials used for photovoltaic applications
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Published |
На языке оригинала
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958,00
|
|
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Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
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Published |
На языке оригинала
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958,00
|
|
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Test method for measuring Phosphorus, Arsenic and Antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
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Published |
На языке оригинала
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958,00
|
|
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Metallographs collection for original defects of crystalline silicon
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Published |
На языке оригинала
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5796,00
|
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Trichlorosilane for silicon epitaxial
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Published |
На языке оригинала
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958,00
|
|
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Trichlorosilane for silicon epitaxial
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Published |
На языке оригинала
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1210,00
|
|
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Polished monocrystalline silicon carbide wafers
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Published |
На языке оригинала
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1814,00
|
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Gallium nitride based epitaxial layer for LED lighting
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Published |
На языке оригинала
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1814,00
|
|
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GaP substrates for LED epitaxial chips
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Published |
На языке оригинала
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1210,00
|
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GaAs substrates for LED epitaxial chips
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Published |
На языке оригинала
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1210,00
|
|
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Polished mono-crystalline sapphire substrate product
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Published |
На языке оригинала
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1613,00
|
|
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Germanium substrate for solar cell
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Published |
На языке оригинала
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1058,00
|
|
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Test method for measuring diameter of monocrystalline silicon carbide wafers
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Published |
На языке оригинала
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958,00
|
|
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Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
|
Published |
На языке оригинала
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958,00
|
|
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Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
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Published |
На языке оригинала
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958,00
|
|
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Monocrystalline sapphire bar
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Published |
На языке оригинала
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1310,00
|
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Soldering fluxes for high-quality interconnections in electronics assembly
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Published |
На языке оригинала
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1613,00
|
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