| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Monocrystalline gallium arsenide polished wafers for solar cell
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Published |
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На языке оригинала
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1253,00
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Granular polysilicon produced by fluidized bed method
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Published |
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На языке оригинала
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1253,00
|
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Epitaxial wafers of germanium based в…ў-в…¤compounds for solar cell
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Published |
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На языке оригинала
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1339,00
|
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200mm silicon epitaxial wafer
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Published |
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На языке оригинала
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1253,00
|
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Collection of metallographs on defects of sapphire crystal
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Published |
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На языке оригинала
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2549,00
|
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Polycrystalline indium phosphide
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Published |
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На языке оригинала
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1037,00
|
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Test method for determination of crystal defect density in PV silicon ingot and wafer
|
Published |
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На языке оригинала
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1253,00
|
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General specification for epitaxial wafers and substrates based on gallium nitride
|
Published |
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На языке оригинала
|
1339,00
|
|
|
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Photovoltaic silicon material—Determination of oxygen—Pulse heating inert gas fusion infrared absorption method
|
Published |
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На языке оригинала
|
1253,00
|
|
|
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Granular polysilicon produced by fluidized bed method—Determination of hydrogen—Pulse heating inert gas fusion infrared absorption method
|
Published |
|
На языке оригинала
|
1253,00
|
|
|
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Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
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Published |
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На языке оригинала
|
1253,00
|
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Silicon electrode and silicon ring for plasma etching machine
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Published |
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На языке оригинала
|
1253,00
|
|
|
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Collection of metallographs on defects in silicon carbide crystal materials
|
Published |
|
На языке оригинала
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4493,00
|
|
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Patterned sapphire substrate
|
Published |
|
На языке оригинала
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1858,00
|
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Silicon carbide epitaxial wafers
|
Published |
|
На языке оригинала
|
1339,00
|
|
|
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Silicon epitaxial wafers with buried layers
|
Published |
|
На языке оригинала
|
1339,00
|
|
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