| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Monocrystalline gallium arsenide polished wafers for solar cell
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Published |
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На языке оригинала
|
1670,00
|
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Granular polysilicon produced by fluidized bed method
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
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Epitaxial wafers of germanium based в…ў-в…¤compounds for solar cell
|
Published |
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На языке оригинала
|
1786,00
|
|
|
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200mm silicon epitaxial wafer
|
Published |
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На языке оригинала
|
1670,00
|
|
|
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Collection of metallographs on defects of sapphire crystal
|
Published |
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На языке оригинала
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3398,00
|
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Polycrystalline indium phosphide
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Published |
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На языке оригинала
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1382,00
|
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|
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Test method for determination of crystal defect density in PV silicon ingot and wafer
|
Published |
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На языке оригинала
|
1670,00
|
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|
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General specification for epitaxial wafers and substrates based on gallium nitride
|
Published |
|
На языке оригинала
|
1786,00
|
|
|
|
Photovoltaic silicon material—Determination of oxygen—Pulse heating inert gas fusion infrared absorption method
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Granular polysilicon produced by fluidized bed method—Determination of hydrogen—Pulse heating inert gas fusion infrared absorption method
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
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Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
|
Published |
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На языке оригинала
|
1670,00
|
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|
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Silicon electrode and silicon ring for plasma etching machine
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
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Collection of metallographs on defects in silicon carbide crystal materials
|
Published |
|
На языке оригинала
|
5990,00
|
|
|
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Patterned sapphire substrate
|
Published |
|
На языке оригинала
|
2477,00
|
|
|
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Silicon carbide epitaxial wafers
|
Published |
|
На языке оригинала
|
1786,00
|
|
|
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Silicon epitaxial wafers with buried layers
|
Published |
|
На языке оригинала
|
1786,00
|
|
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