| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 22%)
в рублях |
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Quartz crystal controlled oscillators of assessed quality - Part 5 - 1:Blank detail specification - Qualification approval
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На языке оригинала
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1537,00
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Quartz crystal controlled oscillators of assessed quality - Part 5: Sectional specification - Qualification approval
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На языке оригинала
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2562,00
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Quartz crystal controlled oscillators of assessed quality - Part 6: Phase jitter measurement method for quartz crystal oscillators and SAW oscillators – Application guidelines
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На языке оригинала
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2562,00
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Measurement and test methods for tuning fork quartz crystal units in the range from 10 kHz to 200 kHz and standard values
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На языке оригинала
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2562,00
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На языке оригинала
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1537,00
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Thermistors - Directly heated positive step-function temperature coefficient - Part 1-1: Blank detail specification - Current limiting application - Assessment level EZ
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На языке оригинала
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2562,00
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Thermistors - Directly heated positive step-function temperature coefficient - Part 1-2: Blank detail specification - Heating element application - Assessment level EZ
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На языке оригинала
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2562,00
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Thermistors - Directly heated positive step-function temperature coefficient - Part 1-3: Blank detail specification - Inrush current application - Assessment level EZ
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На языке оригинала
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2562,00
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Thermistors - Directly heated positive step-function temperature coefficient - Part 1-4: Blank detail specification - Sensing application - Assessment level EZ
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На языке оригинала
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2562,00
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Thermistors - Directly heated positive temperature coefficient - Part 1: Generic specification
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На языке оригинала
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6405,00
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Semiconductor devices - Part 1: General
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На языке оригинала
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6405,00
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Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
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На языке оригинала
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6405,00
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Semiconductor devices - Discrete devices - Part 2:Rectifier diodes - Section one:Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
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На языке оригинала
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2562,00
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Semiconductor devices - Discrete devices - Part 2:Rectifier diodes - Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
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На языке оригинала
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2562,00
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Semiconductor devices - Discrete devices - Part 3:Signal (including switching) and regulator diodes
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На языке оригинала
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4484,00
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Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
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На языке оригинала
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14091,00
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Semiconductor devices - Discrete devices - Part 4 - 2:Microwave diodes and transistors - Integrated-circuit microwave amplifiers - Blank detail specification
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На языке оригинала
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2562,00
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Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices - General
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На языке оригинала
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4484,00
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Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics
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На языке оригинала
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4484,00
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Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
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На языке оригинала
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4484,00
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