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Printed electronics - Part 401: Printability - Overview
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Printed electronics - Part 402-1: Printability - Measurement of qualities - Pattern width
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Printed electronics - Part 402-2: Printability - Measurement of qualities - Edge waviness
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Printed electronics - Part 403-1: Printability - Requirements for reproducibility - Basic patterns for evaluation of printing machine
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Printed electronics - Part 502-1: Quality assessment - Organic light emitting diode(OLED) elements - Mechanical stress testing of OLED elements formed on flexible substrates
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Printed electronics - Part 502-2: Quality assessment - Organic light emitting diode (OLED) elements - Combined mechanical and environmental stress test methods for flexible OLED elements
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Semiconductor devices - Flexible and stretchable semiconductor devices - Part 1: Bending test method for conductive thin films on flexible substrates
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Electronic displays - Part 2-1: Measurements of optical characteristics - Fundamental measurements
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Technical documentation for the assessment of electrical and electronic products with respect to the restriction of hazardous substances
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Interoperability specifications and communication method for external power supplies used with computing and consumer electronics devices
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Integrated circuits - Three dimensional integrated circuits - Part 1: Terminology
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Integrated circuits - Three dimensional integrated circuits - Part 2: Alignment of stacked dies having fine pitch interconnect
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Piezoelectric sensors - Part 1: Generic specifications
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Piezoelectric sensors - Part 2: Chemical and biochemical sensors
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Piezoelectric sensors - Part 3: Physical sensors
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
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Eyewear display - Part 20-10: Fundamental measurement methods - Optical properties
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