| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 22%)
в рублях |
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Micro-electromechanical systems (MEMS) technology-Forming limit measuring method of metallic film materials
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Published |
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На языке оригинала
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1778,00
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Micro-electromechanical systems MEMStechnology-Bulge test method for measuring mechanical properties of thin films
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Published |
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На языке оригинала
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2027,00
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Semiconductor devices-Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs)
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Published |
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На языке оригинала
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1282,00
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Semiconductor devices-Time dependent dielectric breakdown (TDDB) test for inter-metal layers
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Published |
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На языке оригинала
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1572,00
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Semiconductor devices-Hot carrier test on metal-oxide semiconductor(MOS) transistors
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Published |
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На языке оригинала
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1282,00
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Semiconductor devices-Time dependent dielectric breakdown (TDDB) test for gate dielectric films
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Published |
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На языке оригинала
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1778,00
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Semiconductor devices-Stress migration test-Part 1: Copper stress migration test
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Published |
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На языке оригинала
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2233,00
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Semiconductor devices-Constant current electromigration test
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Published |
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На языке оригинала
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1282,00
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Intelligent computing-Test method for memristor-Part 1Basic characteristics
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Published |
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На языке оригинала
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1572,00
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Semiconductor devices-Metallization stress void test
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Published |
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На языке оригинала
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1572,00
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Environmental acceptance requirements for tin whisker susceptibility of tin and tin alloy surface finishes on semiconductor devices
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Published |
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На языке оригинала
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3143,00
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