Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%) в рублях |
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Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
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Published |
На языке оригинала
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3110,00
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Silicon epitaxial wafers
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Published |
На языке оригинала
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1670,00
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Test method for measuring diameter of semiconductor wafer
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Published |
На языке оригинала
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1670,00
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Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
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Published |
На языке оригинала
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1670,00
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Testing method for determination of radial interstitial oxygen variation in silicon
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Published |
На языке оригинала
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1670,00
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Terminology of semiconductor materials
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Published |
На языке оригинала
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7142,00
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Designations of semiconductor materials
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Published |
На языке оригинала
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1670,00
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Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
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Published |
На языке оригинала
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1670,00
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Specification for a universal wafer grid
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Published |
На языке оригинала
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1670,00
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Specification for establishing a wafer coordinate system
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Published |
На языке оригинала
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1382,00
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Gallium arsenide single crystal
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Published |
На языке оригинала
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1670,00
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Gallium phosphide single crystal
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Published |
На языке оригинала
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1786,00
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Indium phosphide single crystal
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Published |
На языке оригинала
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1786,00
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Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
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Published |
На языке оригинала
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1786,00
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Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry
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Published |
На языке оригинала
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1670,00
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Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction
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Published |
На языке оригинала
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1670,00
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Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography
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Published |
На языке оригинала
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1786,00
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Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy
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Published |
На языке оригинала
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1786,00
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Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
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Published |
На языке оригинала
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1670,00
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Solar-grade polycrystalline silicon
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Published |
На языке оригинала
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1670,00
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