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                |  | Semiconductor devices - Discrete devices - Part 2:Rectifier diodes - Section one:Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A |  | 
                
                                           
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                |  | Semiconductor devices - Discrete devices - Part 2:Rectifier diodes - Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A |  | 
                
                                                                       
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                |  | Semiconductor devices - Discrete devices - Part 3:Signal (including switching) and regulator diodes |  | 
                
                                           
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                |  | Semiconductor devices  -  Discrete devices  -  Part 4: Microwave diodes and transistors |  | 
                
                                                                       
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                |  | Semiconductor devices - Discrete devices - Part 4 - 2:Microwave diodes and transistors - Integrated-circuit microwave amplifiers - Blank detail specification |  | 
                
                                           
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                |  | Discrete semiconductor devices and integrated circuits  - Part 5-1: Optoelectronic devices  -  General |  | 
                
                                                                       
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                |  | Discrete semiconductor devices and integrated circuits  - Part 5-2: Optoelectronic devices  -  Essential ratings and characteristics |  | 
                
                                           
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                |  | Discrete semiconductor devices and integrated circuits  - Part 5-3: Optoelectronic devices  -  Measuring methods |  | 
                
                                                                       
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                |  | Semiconductor devices  -  Part 6: Discrete devices  -  Thyristors |  | 
                
                                           
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                |  | Semiconductor devices - Discrete devices - Part 6:Thyristors - Section one:Blank detail specification for reverse blocking triode thyristors, ambient or case-rated, up to 100 A |  | 
                
                                                                       
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                |  | Semiconductor devices - Discrete devices - Part 6:Thyristors - Section two:Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100 A |  | 
                
                                           
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                |  | Semiconductor devices - Discrete devices - Part 6:Thyristors - Section three:Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A |  | 
                
                                                                       
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                |  | Semiconductor devices  -  Discrete devices  -  Part 7: Bipolar transistors |  | 
                
                                           
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                |  | Semiconductor devices  -  Discrete devices  - Part 8: Field-effect transistors |  | 
                
                                                                       
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                |  | Semiconductor devices  -  Part 9: Discrete devices  -   Insulated-gate bipolar transistors(IGBTs) |  | 
                
                                           
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                |  | Semiconductor devices  -  Part 14-1: Semiconductor sensors  -  Generic specification for sensors |  | 
                
                                                                       
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                |  | Semiconductor devices  -  Part 14-10: Semiconductor sensors  -  Performance evaluation methods for wearable glucose sensors |  | 
                
                                           
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                |  | Semiconductor devices - Integrated circuits - Part 2:Digital integrated circuits - Section 3:Blank detail specification for HCMOS digital integrated circuits(series 54/74 HC, 54/74 HCT, 54/74 HCU) |  | 
                
                                                                       
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                |  | Semiconductor devices - Integrated circuits - Part 2:Digital integrated circuits - Section 4:Family specification for complementary MOS digital integrated circuits, series 4 000 B and 4 000 UB |  | 
                
                                           
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                |  | Semiconductor devices - Integrated circuits Part 2:Digital integrated circuits Section 5 - Blank detail specification for complementary MOS digital integrated circuits(series 4 000B and 4 000UB) |  | 
                
                                                                       
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