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LED modules for general lighting - Safety specifications
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Semiconductor devices - MEMS devices - Part 5: RF MEMS switches
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SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
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Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films
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Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
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Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
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DC or AC supplied electronic control gear for LED modules - Performance requirements
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Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
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Semiconductor devices - Flexible and stretchable semiconductor devices - Part 1: Bending test method for conductive thin films on flexible substrates
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
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Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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Use of semiconductor devices outside manufacturers specified temperature range
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